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832A
Twin Beam Power Tube

EIA Base & Outline

EIA Base: 7BPEIA Bulb: 832
Source ........................................ RCA DS 03/51

Application

Heater-cathode type having midtapped heater used as rf power amplifier and oscillator. Requires septar seven-contact socket and may be operated in any position.

Mechanical Data

Bulb .......................................... Large Door Knob
Base Type ..................................... Medium Molded-Flare Septar 7-Pin (JEDEC E7-2)
EIA Outline ................................... 832
EIA Base ...................................... 7BP
Cathode ....................................... Coated Unipotential
Mounting Position ............................. Any

Electrical Data

Heater Voltage ................................ 6.3/12.6 V
Heater Current ................................ 1.6/0.8 A

Direct Interelectrode Capacitances (approx)

Each Pentode
Input ......................................... 8 pf
Output ........................................ 3.8 pf
Grid to Plate ................................. 0.07 pf

Maximum Ratings (Design Center Values)

Push Pull RF Power Amplifier & Oscillator - Class C (CCS)
Plate Voltage ................................. 750 V
Grid No. 2 Voltage ............................ 250 V
Negative Grid No. 1 Voltage ................... 175 V
Plate Input ................................... 36 W
Plate Dissipation ............................. 15 W
Grid No. 2 Dissipation ........................ 5 W
Plate Current ................................. 90 mA
Grid Current .................................. 6 mA
Bulb Temperature (At Hottest Point) ........... 200 °C

Push Pull RF Power Amplifier & Oscillator - Class C (ICAS)
Plate Voltage ................................. 750 V
Grid No. 2 Voltage ............................ 250 V
Negative Grid No. 1 Voltage ................... 175 V
Plate Input ................................... 50 W
Plate Dissipation ............................. 20 W
Grid No. 2 Dissipation ........................ 5 W
Plate Current ................................. 115 mA
Grid Current .................................. 6 mA
Bulb Temperature (At Hottest Point) ........... 200 °C

Plate-Modulated Push Pull RF Power Amplifier - Class C (CCS)
Plate Voltage ................................. 600 V
Grid No. 2 Voltage ............................ 250 V
Negative Grid No. 1 Voltage ................... 175 V
Plate Input ................................... 22 W
Plate Dissipation ............................. 10 W
Grid No. 2 Dissipation ........................ 3.4 W
Plate Current ................................. 75 mA
Grid Current .................................. 6 mA
Bulb Temperature (At Hottest Point) ........... 200 °C

Plate-Modulated Push Pull RF Power Amplifier - Class C (ICAS)
Plate Voltage ................................. 600 V
Grid No. 2 Voltage ............................ 250 V
Negative Grid No. 1 Voltage ................... 175 V
Plate Input ................................... 36 W
Plate Dissipation ............................. 15 W
Grid No. 2 Dissipation ........................ 5 W
Plate Current ................................. 95 mA
Grid Current .................................. 6 mA
Bulb Temperature (At Hottest Point) ........... 200 °C

Characteristics and Typical Operation

Push Pull RF Power Amplifier & Oscillator - Class C (ICAS)
Plate Voltage ................................. 750 V
Grid No. 2 Voltage ............................ 200 V
Grid No. 2 Dropping Resistor .................. 25K Ω
Grid No. 1 Voltage ............................ -50 V
Grid No. 1 Voltage Derived from
Grid No. 1 Resistor ........................ 12.5K Ω
Cathode Bias Resistor ...................... 550 Ω
Peak Grid No. 1 Voltage........................ 130 V
Grid No. 1 Current ............................ 4.0 mA
Plate Current ................................. 65 mA
Grid No. 2 Current ............................ 22 mA
Driving Power ................................. 0.24 W
Power Output (approx) ......................... 35 W
Maximum Frequency ............................. 200 MHz

Push Pull RF Power Amplifier & Oscillator - Class C (CCS)
Plate Voltage ................................. 500 V
Grid No. 2 Voltage ............................ 200 V
Grid No. 2 Dropping Resistor .................. 21K Ω
Grid No. 1 Voltage ............................ -65 V
Grid No. 1 Voltage Derived from
Grid No. 1 Resistor ........................ 25K Ω
Cathode Bias Resistor ...................... 730 Ω
Peak Grid No. 1 Voltage........................ 150 V
Grid No. 1 Current ............................ 2.6 mA
Plate Current ................................. 72 mA
Grid No. 2 Current ............................ 14 mA
Driving Power ................................. 0.18 W
Power Output (approx) ......................... 26 W
Maximum Frequency ............................. 200 MHz

Push Pull RF Power Amplifier & Oscillator - Class C (CCS)
Plate Voltage ................................. 750 V
Grid No. 2 Voltage ............................ 200 V
Grid No. 2 Dropping Resistor .................. 37K Ω
Grid No. 1 Voltage ............................ -65 V
Grid No. 1 Voltage Derived from
Grid No. 1 Resistor ........................ 23K Ω
Cathode Bias Resistor ...................... 1K Ω
Peak Grid No. 1 Voltage........................ 150 V
Grid No. 1 Current ............................ 2.8 mA
Plate Current ................................. 48 mA
Grid No. 2 Current ............................ 15 mA
Driving Power ................................. 0.19 W
Power Output (approx) ......................... 26 W
Maximum Frequency ............................. 200 MHz

Plate-Modulated Push Pull RF Power Amplifier - Class C (ICAS)
Plate Voltage ................................. 600 V
Grid No. 2 Voltage ............................ 200 V
Grid No. 2 Dropping Resistor .................. 20K Ω
Grid No. 1 Voltage ............................ -70 V
Grid No. 1 Voltage Derived from
Grid No. 1 Resistor ........................ 23K Ω
Peak Grid No. 1 Voltage........................ 160 V
Grid No. 1 Current ............................ 3 mA
Plate Current ................................. 60 mA
Grid No. 2 Current ............................ 20 mA
Driving Power ................................. 0.21 W
Power Output (approx) ......................... 26 W
Maximum Frequency ............................. 200 MHz

Plate-Modulated Push Pull RF Power Amplifier - Class C (CCS)
Plate Voltage ................................. 425 V
Grid No. 2 Voltage ............................ 200 V
Grid No. 2 Dropping Resistor .................. 14K Ω
Grid No. 1 Voltage ............................ -60 V
Grid No. 1 Voltage Derived from
Grid No. 1 Resistor ........................ 25K Ω
Peak Grid No. 1 Voltage........................ 140 V
Grid No. 1 Current ............................ 2.4 mA
Plate Current ................................. 52 mA
Grid No. 2 Current ............................ 16 mA
Driving Power ................................. 0.15 W
Power Output (approx) ......................... 17 W
Maximum Frequency ............................. 200 MHz

Plate-Modulated Push Pull RF Power Amplifier - Class C (CCS)
Plate Voltage ................................. 600 V
Grid No. 2 Voltage ............................ 200 V
Grid No. 2 Dropping Resistor .................. 25K Ω
Grid No. 1 Voltage ............................ -65 V
Grid No. 1 Voltage Derived from
Grid No. 1 Resistor ........................ 25K Ω
Peak Grid No. 1 Voltage........................ 150 V
Grid No. 1 Current ............................ 2.6 mA
Plate Current ................................. 36 mA
Grid No. 2 Current ............................ 16 mA
Driving Power ................................. 0.18 W
Power Output (approx) ......................... 17 W
Maximum Frequency ............................. 200 MHz

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Sat, 25 Jun 2022 11:01:59 -0700