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6AF11
Twin Triode - Sharp-Cutoff Pentode

EIA Base & Outline

EIA Base: 12DPEIA Bulb: 9-58

Substitute Data

Preferred Substitutes ......................... 6AS11
Substitutes ................................... 6BD11
Source ........................................ GE DS 11/62

Application

Source ........................................ GE DS 11/62
Duodecar type used in television receiver applications. The high-mu triode unit is used for agc keyer service, the medium-mu triode unit for sync separator service, and the pentode unit for video amplifier service. Requires duodecar 12-contact socket.

Mechanical Data

Source ........................................ GE DS 11/62
Bulb .......................................... T-9
Base Type ..................................... E12-70 Button 12-Pin
EIA Outline ................................... 9-58
EIA Base ...................................... 12DP
Cathode ....................................... Coated Unipotential
Mounting Position ............................. Any

Electrical Data

Source ........................................ GE DS 11/62
Heater Voltage ................................ 6.3 V
Heater Current ................................ 1.05 A
Maximum Heater-Cathode Voltage
Heater Positive with Respect to Cathode
DC Component ............................ 100 V
Total DC and Peak ....................... 200 V
Heater Negative with Respect to Cathode
DC Component ............................ 200 V
Total DC and Peak ....................... 200 V

Direct Interelectrode Capacitances (approx)

Pentode
Source ........................................ GE DS 11/62
Input ......................................... 10.0 pf
Output ........................................ 4.5 pf
Grid to Plate ................................. 0.12 pf

Triode 1
Source ........................................ GE DS 11/62
Input ......................................... 3.0 pf
Output ........................................ 2.2 pf
Grid to Plate ................................. 1.9 pf

Triode 2
Source ........................................ GE DS 11/62
Input ......................................... 2.4 pf
Output ........................................ 3.8 pf
Grid to Plate ................................. 3.6 pf

Maximum Ratings (Design Center Values)

Pentode
Source ........................................ GE DS 11/62
Plate Voltage ................................. 330 V
Grid No. 2 Voltage ............................ 330 V
Positive Grid No. 1 Voltage ................... 0 V
Plate Dissipation ............................. 5 W
Grid No. 2 Dissipation ........................ 1.25 W
Grid No. 1 Circuit Resistance
Fixed Bias ................................. 250K Ω
Self Bias .................................. 1M Ω

Triode 1
Source ........................................ GE DS 11/62
Plate Voltage ................................. 330 V
Positive Grid No. 1 Voltage ................... 0 V
Plate Dissipation ............................. 1.1 W
Grid No. 1 Circuit Resistance
Fixed Bias ................................. 500K Ω
Self Bias .................................. 1M Ω

Triode 2
Source ........................................ GE DS 11/62
Plate Voltage ................................. 330 V
Positive Grid No. 1 Voltage ................... 0 V
Plate Dissipation ............................. 2 W
Grid No. 1 Circuit Resistance
Fixed Bias ................................. 500K Ω
Self Bias .................................. 1M Ω

Characteristics and Typical Operation

Triode 1 Class A Amplifier
Source ........................................ GE DS 11/62
Plate Voltage ................................. 150 V
Grid No. 1 Voltage ............................ -2.0 V
Amplification Factor .......................... 68
Plate Resistance (approx) ..................... 12.4K Ω
Transconductance .............................. 5500 µMho
Plate Current ................................. 7.0 mA
Grid No. 1 Voltage for Ib ..................... 10 µa @ -5.5 V

Triode 2 Class A Amplifier
Source ........................................ GE DS 11/62
Plate Voltage ................................. 200 V
Grid No. 1 Voltage Derived from
Cathode Bias Resistor ...................... 220 Ω
Amplification Factor .......................... 41
Plate Resistance (approx) ..................... 9400 Ω
Transconductance .............................. 4400 µMho
Plate Current ................................. 9.2 mA
Grid No. 1 Voltage for Ib ..................... 100 µa @ -6.5 V

Pentode Class A Amplifier
Source ........................................ GE DS 11/62
Plate Voltage ................................. 250 V
Grid No. 2 Voltage ............................ 150 V
Grid No. 1 Voltage Derived from
Cathode Bias Resistor ...................... 100 Ω
Plate Resistance (approx) ..................... 68K Ω
Transconductance .............................. 11K µMho
Plate Current ................................. 24 mA
Grid No. 2 Current ............................ 4.8 mA
Grid No. 1 Voltage for Ib ..................... 100 µa @ -10 V

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Tue, 16 Aug 2022 10:17:52 -0700